DOI:10.29111/ijlrst ISRA Impact Factor:3.35, Peer-reviewed, Open-access Journal
Research Paper Open Access
International Journal of Latest Research in Science and Technology Vol.3 Issue 5, pp 29-33,Year 2014
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Received : 05 October 2014; Accepted : 20 October 2014 ; Published : 31 October 2014
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Article No. | 10388 |
Transparent semiconducting Al-doped ZnO thin films were prepared on silicon substrates by spray pyrolysis method followed by in air annealing at 450°C. Zinc acetate dehydrate, 2-methoxyethanol and aluminum nitrate were used as a starting material, a solvent and a dopant source, respectively. X-ray diffraction patterns show that annealing process improves the crystallinity of the Al doped ZnO thin films .The mechanism of blue-green luminescence of AZO thin film are analyzed. Energy-dispersive X-rays (EDX) were used to analysis the composition of Al doped ZnO films. The morphology of the AZO thin films is studied by atomic force microscopy and FE-SEM analysis. Average diameter of some also obtained nanorods is ~60 nm.
Copyright © 2014 Mohammad Reza Khanlary et al. This is an open access article distributed under the Creative Commons Attribution 4.0 International (CC BY 4.0) license which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Mohammad Reza Khanlary , Farnia Rashvand , " Properties Of Fabricated Al Doped Zno Nanorods By Spray Pyrolysis Method And Influence Of Annealing Process On Their Properties ", International Journal of Latest Research in Science and Technology . Vol. 3, Issue 5, pp 29-33 , 2014
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